| 摘要 |
A method of manufacturing SIMOX wafer and the SIMOX wafer are provided to reduce particles on the surfaces of wafer by setting various exfoliation conditions in the oxide film stripping process. The manufacture of the SIMOX(Silicon Implantation of Oxygen) wafer comprises the oxide film stripping process after the oxygen implantation process(S01) and the high temperature annealing process(S04), for forming the buried oxide layer and the high temperature annealing process. The oxide film stripping process comprises the back surface oxide film stripping process(S16) and the surface oxide layer stripping process(S15). In the surface and back surface oxide film stripping process, each oxide film exfoliation condition is controlled by the different condition.
|
