LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL

摘要

The present invention is an electronic memory cell and a method for the cell's fabrication comprising a The first transistor configured to be coupled to a bit line. The first transistor has an essentially zero voltage drop when activated and is configured to control an operation of the memory cell. A second transistor is configured to operate as a memory transistor and is coupled to the first transistor. The second transistor is further configured to be programmable with a voltage about equal to a voltage on the bit line.