| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate, including
an active layer having a first conductivity type in which an element region and a contact region are formed,a support substrate having a second conductivity type and supporting the active layer, anda buried insulation layer interposed between the active layer and the support substrate to electrically insulate the active layer and the support substrate; a transistor element formed in the element region, the transistor element including a transistor buried impurity layer formed within the active layer and being spaced apart from a surface of the active layer; a substrate contact, including
a contact buried impurity layer formed within the contact region, anda through contact extending from the surface of the active layer to the support substrate, the contact buried impurity layer corresponding to a same layer as the transistor buried impurity layer; and an electrode pad formed at a peripheral portion of the semiconductor device, wherein the electrode pad is formed in each of at least three out of four corners of the semiconductor device, wherein at least one substrate contact is formed outside the element region surrounded by the buried insulation layer. |
