| 发明名称 |
HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME |
| 摘要 |
A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material. |
| 申请公布号 |
US2016282721(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201514825792 |
申请日期 |
2015.08.13 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
SEOL Minsu;KIM Sangwon;SHIN Hyeonjin;PARK Seongjun;CHO Yeonchoo |
| 分类号 |
G03F7/11 |
主分类号 |
G03F7/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hardmask composition comprising:
a plurality of graphene nanosheets, each of the plurality of graphene nanosheets being doped with at least one of boron (B) and nitrogen (N); and a solvent. |
| 地址 |
Suwon-si KR |
