发明名称 |
SEMICONDUCTOR CIRCUIT DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR CIRCUIT DEVICE |
摘要 |
<p>To provide a semiconductor integrated circuit device, which has components of a fin-type FET suited for a high integration LSI and formed on a supporting substrate and which uses wires buried in trenches of the supporting substrate for connecting the components, and a method for manufacturing the semiconductor integrated circuit device. The semiconductor integrated circuit device comprises a MOS transistor element or the fin-type FET having a stereoscopic isolation area of silicon formed on a supporting substrate and a gate electrode formed on the surface of the stereoscopic isolation area of silicon, buried wires buried in trenches formed in self-alignment in the stereoscopic isolation area of silicon of the supporting substrate, and on-substrate wires on the supporting substrate. The MOS transistor elements are connected by the buried wires and the on-subsrate wires.</p> |
申请公布号 |
WO2006090445(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
WO2005JP02908 |
申请日期 |
2005.02.23 |
申请人 |
FUJITSU LIMITED;FUKUTOME, HIDENOBU |
发明人 |
FUKUTOME, HIDENOBU |
分类号 |
H01L27/12;H01L21/3205;H01L21/8234;H01L21/8244;H01L27/08;H01L27/11;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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