Nitride Semiconductor LED and Fabrication Method Thereof

摘要

A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1-xN layer formed on the first electrode layer; an active layer formed on the InxGa1-xN layer; a first P-GaN layer formed on the active layer; a second electrode layer formed on the first P-GaN layer; a second P-GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P-GaN layer.