摘要 |
A halogen doping source for doping part of an oxide thin film with halogen by atomic layer deposition, a method of manufacturing the same halogen doping source, a method of doping part of an oxide thin film with the same halogen doping source by atomic layer deposition and a halogen-doped oxide thin film fabricated by the same doping method. The halogen doping source is a solution in which a hydrogen halide is diluted with water. The hydrogen halide diluted in 48 to 51% is prepared and subsequently added to deionized water, thereby forming a diluted solution. A substrate on which an oxide thin film is formed is loaded into an atomic layer deposition chamber. The diluted solution is sprayed into the chamber, whereby part of the oxide thin film is substituted with the halogen. |