发明名称 |
Complementary junction-narrowing implants for ultra-shallow junctions |
摘要 |
Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant as well as the implantation of at least two species effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing.
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申请公布号 |
US2005042848(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040942607 |
申请日期 |
2004.09.15 |
申请人 |
JAIN AMITABH;BUTLER STEPHANIE W. |
发明人 |
JAIN AMITABH;BUTLER STEPHANIE W. |
分类号 |
H01L21/265;H01L21/324;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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