| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw material for depositing a thin film, which is a precursor which is used for supplying hafnium to the thin film and to which the properties coincident with those of a CVD raw material are imparted. SOLUTION: The raw material for depositing the thin film contains a new hafnium compound shown by general formula (1) (wherein R<SP>1</SP>is a methyl group; R<SP>2</SP>is a group selected from a methyl group, an ethyl group and an isopropyl group; and n is 1). In the formula, R<SP>1</SP>is a 1-3C alkyl group and can be the same or different; R<SP>2</SP>is a 1-4C alkyl group and can be the same or different; and n is a numeral of 1-5. COPYRIGHT: (C)2008,JPO&INPIT
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