| 发明名称 |
Collector-Side-Base-Driven Two-Base-Contact Bipolar Transistor with Reduced Series Resistance |
| 摘要 |
Improved B-TRAN devices, and collector-side-base-drive methods, in which an additional doping component is added between the base contact region and the base region at the center of the die's thickness. |
| 申请公布号 |
US2016269021(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615018844 |
申请日期 |
2016.02.08 |
| 申请人 |
Ideal Power Inc. |
发明人 |
Blanchard Richard A. |
| 分类号 |
H03K17/60;H01L29/74;H01L29/747 |
主分类号 |
H03K17/60 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A B-TRAN having a resistance-reducing doping component under base contact locations on both front and back surfaces. |
| 地址 |
Austin TX US |
