| 摘要 |
A method for forming a metal interconnection of a semiconductor device is provided to suppress migration of aluminum by forming an Al growth preventing layer made of TiN or Al2O3 on the upper boundary of an Al interconnection. An Al interconnection and a Ti layer(220) are sequentially deposited on an interlayer dielectric(210) on a semiconductor substrate having a predetermined underlying structure to form an Al interconnection stack structure including a plurality of layers. An ion implantation process is performed on the substrate including the Al interconnection stack structure to implant reaction ions into an interface of the Al interconnection and the Ti layer. The implanted reaction ions react with Al of the Al interconnection or the Ti layer to form an Al growth preventing layer(270) on the upper boundary of the Al interconnection. The Al interconnection stack structure including the Al growth preventing layer is dry-etched to form a plurality of Al interconnection stack structure pattern on the interlayer dielectric. In using oxygen ions as the reaction ions, the oxygen ions can react with the Al of the Al interconnection to form an Al growth preventing layer composed of Al2O3. |
