SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To enable a formation of a multilayer interconnection structure capable of sufficiently holding an interlayer insulating film with excellent flatness while reducing a capacity between adjacent wirings and a capacity between upper and lower wirings. SOLUTION: A first insulating film 2 made of a silicon oxide is formed on a semiconductor substrate 1 made of a silicon, and a lower layer wiring pattern 3 made of an aluminum alloy is formed on the film 2. An insulating film pattern 4 made of a silicon oxide film is formed on the pattern 3. The interlayer insulating film 6 made of a polyimide is formed on an upper part of a side face of the pattern 4. An air gap is provided between a side face of the pattern 3 and the film 6. An upper layer wiring pattern 7 made of the aluminum alloy is formed on the film 6 and the pattern 4. The pattern 7 is electrically connected to the pattern 3 via a plug 8 made of a tungsten.