| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor wafer structure which makes the interior of a wafer surface uniform in reflection factor, in order to acquire an uniform temperature change over a wafer whole region, when a rapid thermal annealing process of a semiconductor structure including a combination of different semiconductor materials is carried out. SOLUTION: In a semiconductor wafer structure in which a first device 401 includes epitaxial growth silicon germanium with a first reflection factor, and a second device 402 includes single crystal silicon with a second reflection factor, a uniform reflection factor is obtained by distributing a first device 451 as a non-functionality dummy including silicon germanium, and a second device 452 as a non-functionality dummy including single crystal silicon over the wafer whole region to obtain the same overall ratio and same density as a distribution of the first and the second device. COPYRIGHT: (C)2008,JPO&INPIT
|
