| 摘要 |
A method of forming a contact hole pattern, including: a block copolymer layer forming step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate having on a surface thereof a thin film with a hole pattern formed, so as to cover the thin film; a phase separation step in which the layer containing the block copolymer is subjected to phase separation; a selective removing step in which phase of at least one block of the plurality of blocks constituting the block copolymer is removed, wherein hole diameter of the hole pattern formed on the thin film is 0.8 to 3.1 times period of the block copolymer, and in the layer forming step, thickness between upper face of the thin film and surface of the layer containing the block copolymer is 70% or less of thickness of the thin film. |
