| 摘要 |
The present invention generally relates to a device having a ferroelectric film, and particularly, to a semiconductor device having a ferroelectric film being epitaxially grown on a silicon substrate. A capacitance device of the present invention includes a substrate having a (111) orientation, an epitaxial film formed on the substrate and having a perovskite structure and a (001) orientation, and an electrode formed on the epitaxial film. A method of forming an epitaxial film having a perovskite structure according to the present invention includes a step of epitaxially growing, on a substrate having a (111) orientation, a metal oxide film of a rock salt structure and having a (001) orientation, and a step of further epitaxially growing, on the metal oxide film, a metal oxide film of a perovskite structure and having a (001) orientation. According to the present invention, it is possible to fabricate devices having various functions, such as a ferroelectric random access memory, a SAW filter, or a ferroelectric actuator. <IMAGE> |
