METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming an MOS transistor and a bipolar transistor capable of achieving a high hFE with a small variation on the same semiconductor substrate, and a semiconductor device.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a base region 4, an emitter region 5, and a collector region 3 in a bipolar region 1 of a silicon substrate 10; forming a gate electrode 20b, a source region 6, and a drain region 7 in an MOS region 2 of the silicon substrate 10; forming a metal silicide film 50b partly covering the emitter region 5; forming an interlayer insulating film 60 on the silicon substrate 10 on which metal silicide films 50a and 50b are formed; forming a contact hole 61b penetrating the interlayer insulating film 60 directly above the portion covered by the metal silicide film 50b in the emitter region 5; and forming a metal wiring 71b in the contact hole 61b.SELECTED DRAWING: Figure 1