| 发明名称 |
Dielectric Structures with Negative Taper and Methods of Formation Thereof |
| 摘要 |
A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. The auxiliary layer is removed to form the dielectric structure having a negative taper. The dielectric structure has a top critical dimension greater than a bottom critical dimension. |
| 申请公布号 |
US2016240429(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201514621082 |
申请日期 |
2015.02.12 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Engelhardt Manfred |
| 分类号 |
H01L21/762;H01L21/311;H01L21/02;H01L21/3065 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a dielectric structure, the method comprising:
forming an auxiliary layer over a substrate; forming a hole within the auxiliary layer; depositing a fill material into the hole; and removing the auxiliary layer to form the dielectric structure having a negative taper, the dielectric structure having a top critical dimension (CD) greater than a bottom CD. |
| 地址 |
Neubiberg DE |
