SEMICONDUCTOR LIGHT EMITTING DIODE

摘要

Disclosed is a semiconductor light emitting device having excellent current spreading effect. According to the present invention, the semiconductor light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an activation layer, and a second conductive type semiconductor layer; a transparent conductive layer formed on the second conductive type semiconductor layer of the light emitting structure; a first electrode electrically connected to the first conductive type semiconductor layer; a second electrode which is formed on the transparent conductive layer and is electrically connected to the second conductive type semiconductor layer; and a graphene pattern which is formed in partial areas on the transparent conductive layer and is extended from the second electrode.