发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a TFT substrate, by which a high volume resistivity of a cured film (organic film) is maintained even after the substrate is treated with a stripping solution composition, an organic EL display device using the above method for manufacturing a TFT substrate, a method for manufacturing a liquid crystal display device, an organic EL display device, and a liquid crystal display device.SOLUTION: The method for manufacturing a thin film transistor substrate includes at least the following step 1 to step 6 in the described order. Step 1: an organic film is formed on at least a part of a thin film transistor substrate by using a specific curable composition. Step 2: an inorganic film is formed on at least a part of the organic film. Step 3: a resist layer is formed on the inorganic film. Step 4: the resist layer is exposed and developed. Step 5: the inorganic film is etched through the developed resist layer. Step 6: the resist layer is stripped and removed by using a specific stripping solution composition.SELECTED DRAWING: None |
申请公布号 |
JP2016154230(A) |
申请公布日期 |
2016.08.25 |
申请号 |
JP20160026549 |
申请日期 |
2016.02.16 |
申请人 |
FUJIFILM CORP |
发明人 |
SHIMOYAMA TATSUYA;YAMAZAKI KENTA |
分类号 |
H01L21/312;G02F1/1333;G03F7/004;G03F7/022;G03F7/038;G03F7/42;H01L21/027;H01L21/304;H01L21/336;H01L29/786;H01L51/50;H05B33/10;H05B33/12;H05B33/22 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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