发明名称 |
Double density NROM with nitride strips (DDNS) |
摘要 |
An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or "strips" (or "stripes"). This provides having two physically separated charge storage regions (nitride "strips", or "stripes") in each memory cell.
|
申请公布号 |
US2007200180(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20060646430 |
申请日期 |
2006.12.28 |
申请人 |
IRANI RUSTOM;EITAN BOAZ;BLOOM ILAN;SHAPPIR ASSAF |
发明人 |
IRANI RUSTOM;EITAN BOAZ;BLOOM ILAN;SHAPPIR ASSAF |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|