| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To decrease the number of sampling points of electron beams per pixel, and to suppress the reduction of irradiation position accuracy of the electron beams to be radiated to the pixels. <P>SOLUTION: In a scanning method of electron beams to be radiated to each pixel of the TFT array in the defect inspection of the TFT array by electron beam irradiation, the number of sampling points of electron beams per pixel is reduced by setting the scanning direction of the electron beams in each pixel at a substantially diagonal direction, and the reduction of the irradiation position accuracy of the electron beams to be radiated to the pixels is suppressed. The electron beams are scanned in the source direction and gate direction of the TFT array, and the electron beams are radiated to each pixel. Irradiation is performed at a pixel pitch in the electron beam scan in at least one of the source direction and gate direction of the TFT array, and the irradiation position of the electron beams is offset between adjacent scanning lines. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
