发明名称 |
METHOD FOR IN-LINE MONITORING AND CONTROLLING OF HEAT TREATMENT FOR WAFER COATED WITH RESIST |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for monitoring and controlling a wafer by which measurement data density required to optimize heat treatment is improved while having high wafer processing capability. SOLUTION: A temperature profile is set for each of a plurality of hot plates in a processing system (1010). A manufacturing wafer coated with resist is heat-treated on a hot plate (1020). CD measurement data is acquired from an inspection region on the manufacturing wafer coated with resist which is heat-treated (1030). A temperature of each hot plate is decided based on the CD measurement data (1040). The temperature profile of one or more hot plates is controlled (1050). After controlling, other manufacturing wafer coated with resist is heated on the hot plate to heat-treat the wafer coated with resist (1060). COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008091918(A) |
申请公布日期 |
2008.04.17 |
申请号 |
JP20070255605 |
申请日期 |
2007.09.28 |
申请人 |
TOKYO ELECTRON LTD;TOKYO ELECTRON AMERICA INC |
发明人 |
HEIKO WEICHERT;KIRSTEN RUCK |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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