发明名称 |
BI-AXIAL TEXTURING OF HIGH-K DIELECTRIC FILMS TO REDUCE LEAKAGE CURRENTS |
摘要 |
The present invention is directed to methods of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a high-K dielectric material assisted with an ion beam to enable the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric films have a high degree of crystallographic alignment at grain boundaries. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The result is a dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.
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申请公布号 |
US2010022060(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090574479 |
申请日期 |
2009.10.06 |
申请人 |
LSI CORPORATION |
发明人 |
LO WAI;SUN SEY-SHING;CATABAY WILBUR |
分类号 |
H01L21/336;H01L21/31 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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