| 发明名称 |
IR PHOTODETECTOR USING METAMATERIAL-BASED ON AN ANTIREFLECTION COATING TO MATCH THE IMPEDANCE BETWEEN AIR AND SP RESONATOR |
| 摘要 |
Provided are an infrared photodetector and a method for manufacturing the same. The infrared photodetector includes a bottom contact layer, a light absorption layer stacked on the bottom contact layer, a top contact layer stacked on the light absorption layer, a metal layer stacked on the top contact layer to induce surface plasmon resonance and having a plurality of holes, and a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency. The dielectric layer is a benzocyclobutene (BCB) layer. |
| 申请公布号 |
US2016365463(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201514826708 |
申请日期 |
2015.08.14 |
| 申请人 |
Korea Research Institute of Standards and Science |
发明人 |
Lee Sang-Jun;Kang Sang-Woo;Kim Jun-Oh |
| 分类号 |
H01L31/0216;H01L31/0304;H01L31/0352;H01L31/109;H01L31/18 |
主分类号 |
H01L31/0216 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An infrared photodetector comprising:
a bottom contact layer; a light absorption layer stacked on the bottom contact layer; a top contact layer stacked on the light absorption layer; a metal layer stacked on the top contact layer to induce surface plasmon resonance and comprising a plurality of holes; a bottom metal electrode formed on the bottom contact layer to provide Ohmic contact; a top metal electrode disposed on the top contact layer to provide Ohmic contact; and a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency, wherein the dielectric layer is a benzocyclobutene (BCB) layer. |
| 地址 |
Daejeon KR |
