| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make a programming speed faster as compared with an erasing speed by performing the programming and erasing operation in the manner of applying voltages to a memory device having such characteristics that the speed is slow for a positive voltage and fast for a negative voltage, so as to apply the negative voltage during the programming operation and the positive voltage during the erasing operation. <P>SOLUTION: The memory device and method for operating the same are provided, and this method includes applying the negative voltage bias to the memory device during the programming operation of the memory device and applying a positive voltage bias to the memory device during the erasing operation of the memory device. Also, the memory device includes a substrate and a gate structure formed on the substrate, and the gate structure has the characteristics exhibiting a faster flat band voltage shift under the negative voltage bias than the positive voltage bias, and the gate structure receives the negative voltage bias during the programming of the memory device and receives the positive voltage bias during the erasing operation of the memory device. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
