| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection type electrooptical device having satisfactory transistor characteristics and capable of preventing an image defect by preventing arrival of light at a channel region of a TFT and to provide an electronic device provided with the reflection type electrooptical device. <P>SOLUTION: In the electrooptical device, first dielectric layers 11, 34, 12, 13 and 14 are formed so as to cover the periphery including lower and upper layer sides of the TFT 30, a pixel electrode 23 (reflection electrode) for covering an upper surface of at least the first dielectric layer 14 is formed so as to be two-dimensionally superposed on the TFT 30, a second dielectric layer 15 having a refractive index different from that of the first dielectric layers 11, 34, 12, 13 and 14 is formed between pixels so as to come in contact with the side surface of the first dielectric layer 14 and a boundary surface B between the first and the second dielectric layers 14 and 15 is positioned in a region where the pixel electrode 23 (reflection electrode) is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
