| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve piezoelectric characteristics by suppressing the scattering of bulk elastic wave in a thin piezoelectric film in a piezoelectric device utilizing a thickness vertical vibration and including: a board; and the thin piezoelectric film and upper and lower electrodes formed to be mutually opposed by holding the thin piezoelectric film between them in a thickness direction, which are supported by the board. <P>SOLUTION: The upper electrode 6 and the lower electrode 7 have a structure where a twin crystal epitaxial electrode 9, including an epitaxial film having a twin crystal structure, is formed on a base layer 8 with Ti as a main component. The thin piezoelectric film 5 is also constituted of the epitaxial film having the twin crystal structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
