发明名称 |
PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES |
摘要 |
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10- 1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire. |
申请公布号 |
WO2008048704(A2) |
申请公布日期 |
2008.04.24 |
申请号 |
WO2007US63673 |
申请日期 |
2007.03.09 |
申请人 |
STC.UNM;HERSEE, STEPHEN M.;WANG, XIN;SUN, XINYU |
发明人 |
HERSEE, STEPHEN M.;WANG, XIN;SUN, XINYU |
分类号 |
H01L21/20;H01L31/0304 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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