| 发明名称 |
Method for improving fin isolation |
| 摘要 |
A method of processing a workpiece to create a doped fin structure is disclosed. A portion of the workpiece is subjected to a pre-amorphizing implant to create an amorphized region. This amorphized region is then implanted with dopant species, at an implant energy and dose so that the dopant species are contained within the amorphized region. The doped amorphized region is then subjected to a laser melt anneal which crystallizes the amorphized region. The dopant profile is box-like, and the dopant is confined to the previously amorphized region. |
| 申请公布号 |
US9455196(B2) |
申请公布日期 |
2016.09.27 |
| 申请号 |
US201514934616 |
申请日期 |
2015.11.06 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Pradhan Nilay A.;Colombeau Benjamin;Gossmann Hans-Joachim L. |
| 分类号 |
H01L21/04;H01L21/8234;H01L21/265;H01L21/324;H01L21/268;H01L21/762;H01L29/66;H01L29/06;H01L21/8238 |
主分类号 |
H01L21/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of creating a doped fin structure for a three-dimensional transistor, the method comprising:
implanting an amorphizing species into a workpiece to create an amorphized region; implanting a dopant species into said amorphized region; performing a laser melt anneal after said dopant species are implanted into said amorphized region to form a doped crystalline region; and etching the doped crystalline region to create a doped fin structure. |
| 地址 |
Gloucester MA US |
