发明名称 Positive resist composition and method for forming resist pattern using same
摘要 A resist composition is disclosed which is capable of suppressing the surface roughness that occurs within a resist pattern, either following etching or following developing, or preferably following both processes. A resist pattern is formed using a positive resist composition that includes: a resin component (A), which contains at least one structural unit (a1) containing a lactone represented by one of the general formulas (1) through (4) shown below: (wherein, R represents a hydrogen atom or a methyl group, and m is either 0 or 1), and exhibits increased alkali solubility under the action of acid; an acid generator component (B) that generates acid on exposure; and an organic solvent (C).
申请公布号 US2006194141(A1) 申请公布日期 2006.08.31
申请号 US20040563501 申请日期 2004.06.30
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 HADA HIDEO;MIYAIRI MIWA;IWAI TAKESHI
分类号 G03C1/76;G03F7/004;C08F20/18;C08F220/18;C08F220/28;G03F7/039;H01L21/027;H01L21/30 主分类号 G03C1/76
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