发明名称 |
Positive resist composition and method for forming resist pattern using same |
摘要 |
A resist composition is disclosed which is capable of suppressing the surface roughness that occurs within a resist pattern, either following etching or following developing, or preferably following both processes. A resist pattern is formed using a positive resist composition that includes: a resin component (A), which contains at least one structural unit (a1) containing a lactone represented by one of the general formulas (1) through (4) shown below: (wherein, R represents a hydrogen atom or a methyl group, and m is either 0 or 1), and exhibits increased alkali solubility under the action of acid; an acid generator component (B) that generates acid on exposure; and an organic solvent (C).
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申请公布号 |
US2006194141(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20040563501 |
申请日期 |
2004.06.30 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HADA HIDEO;MIYAIRI MIWA;IWAI TAKESHI |
分类号 |
G03C1/76;G03F7/004;C08F20/18;C08F220/18;C08F220/28;G03F7/039;H01L21/027;H01L21/30 |
主分类号 |
G03C1/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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