发明名称 FLASH MEMORY SCATTER-WRITE METHOD
摘要 A flash memory scatter-write method divides a physical block of a flash memory into two areas, the first area includes a plurality of sub areas, and the second area is an area containing no data and provided for alternately writing data. If a data is written into a flash memory, a physical block in a non-predetermined sub area is selected from the first area first, and then a desired write-in physical block in the second area is selected, such that if the number of times of writing data at that particular time is a multiple of a predetermined value, then the write-in physical block is changed to another physical block in the second area for writing data, and then the data in the selected physical block of the first area is written into the physical block of the second area, and the selected physical block of the first area is moved to the second area, and the physical block of the second area containing the written data is moved to the first area, so as to scatter the number of times of writing data in each block and extend the life of the flash memory.
申请公布号 US2007288685(A1) 申请公布日期 2007.12.13
申请号 US20060423148 申请日期 2006.06.09
申请人 PHISON ELECTRONICS CORP. 发明人 CHU CHIEN-HUA
分类号 G06F12/00 主分类号 G06F12/00
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