发明名称 ガス供給系及び成膜装置
摘要 PROBLEM TO BE SOLVED: To provide a gas supply system in which backflow of gas can be prevented when a flow of gas is switched between a gas supply line and a vent line.SOLUTION: There is provided a gas supply system 10 supplying gas required for film deposition processing to a processing vessel 4 performing the film deposition processing. The gas supply system 10 includes: a gas supply line 54 in which a first on-off valve V1 is interposed, and which supplies gas to the processing vessel; a vent line 56 in which a second on-off valve V2 is interposed, and which is branched from the gas supply line; and a valve control section 66 which, when switching a flow of gas from a processing vessel side to a vent line side, controls the second on-off valve to be opened after the lapse of a first predetermined time T1 during which pressure in the gas supply line becomes higher than pressure at the vent line side by bringing the first and second on-off valves into a simultaneously closed state and which, when switching the flow of gas from the vent line side to the processing vessel side, controls the first on-off valve to be opened after binging the first and the second on-off valves into the simultaneously closed state.
申请公布号 JP6020227(B2) 申请公布日期 2016.11.02
申请号 JP20130024454 申请日期 2013.02.12
申请人 東京エレクトロン株式会社 发明人 佐藤 健一;白谷 勇雄
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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