发明名称 FIELD EMISSION DISPLAY AND FABRICATING METHOD THEREOOF
摘要 The present invention relates to a field emission display device and a method for producing the same. The field emission display device comprises: a thin film transistor (TFT) having a top gate structure; a pixel electrode connected with the TFT; a diffusion blocking layer formed on the pixel electrode; a seed metal pattern formed on the diffusion blocking layer; and a carbon nano-tube formed on the seed metal pattern. A gate of the TFT overlaps any one among a drain and a source. An electrode which does not overlap the gate of the TFT from the drain and the source is connected with the pixel electrode. According to the present invention, the structure of a TFT array substrate is simplified, and the number of production processes may be reduced.
申请公布号 KR20160076481(A) 申请公布日期 2016.06.30
申请号 KR20150183527 申请日期 2015.12.22
申请人 LEE, CHOON RAE;CHOI, YONG HOON 发明人 LEE, CHOON RAE;CHOI, YONG HOON
分类号 H01J1/304 主分类号 H01J1/304
代理机构 代理人
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