发明名称 |
FIELD EMISSION DISPLAY AND FABRICATING METHOD THEREOOF |
摘要 |
The present invention relates to a field emission display device and a method for producing the same. The field emission display device comprises: a thin film transistor (TFT) having a top gate structure; a pixel electrode connected with the TFT; a diffusion blocking layer formed on the pixel electrode; a seed metal pattern formed on the diffusion blocking layer; and a carbon nano-tube formed on the seed metal pattern. A gate of the TFT overlaps any one among a drain and a source. An electrode which does not overlap the gate of the TFT from the drain and the source is connected with the pixel electrode. According to the present invention, the structure of a TFT array substrate is simplified, and the number of production processes may be reduced. |
申请公布号 |
KR20160076481(A) |
申请公布日期 |
2016.06.30 |
申请号 |
KR20150183527 |
申请日期 |
2015.12.22 |
申请人 |
LEE, CHOON RAE;CHOI, YONG HOON |
发明人 |
LEE, CHOON RAE;CHOI, YONG HOON |
分类号 |
H01J1/304 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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