| 摘要 |
A method for forming a capacitor in a semiconductor device is provided to secure desired capacitance and leakage current characteristic by using a ZrO2/HfO2 dielectric layer including a ZrO2 thin film having large band gap energy and a dielectric constant and an HfO2 thin film having prominent interfacial affinity. A semiconductor substrate(1) having a storage node contact(4) is provided. A metal storage electrode(10) is connected with the storage node contact. An HfO2 thin film(12) is deposited on the metal storage electrode. A ZrO2 thin film(14) is deposited on the HfO2 thin film to form a dielectric layer(20) with a double layer of the HfO2 thin film and the ZrO2 thin film. A metal plate electrode(30) is formed on the dielectric layer.
|
