发明名称 PLATING TREATMENT METHOD, STORAGE MEDIUM AND PLATING TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To form a plating layer selectively in a recess formed in a substrate surface.SOLUTION: A plating treatment method includes a catalyst layer formation step of forming a catalyst layer (118) on the surface of a substrate including the inner surface of a recess (112), a drying step of drying the substrate on which the catalyst layer is formed to the inside of the recess, a removal step of supplying a process liquid, capable of melting a substance composing the surface of the substrate, to the dried surface of the substrate while rotating the dried surface, and while preventing or suppressing intrusion of the process liquid to the inside of the dried recess, removing the catalyst layer on the surface of the substrate at least on the outside of the recess, and a plating step of forming a plating layer (119) in the recess where the catalyst layer is formed, by electroless plating.SELECTED DRAWING: Figure 2
申请公布号 JP2016207720(A) 申请公布日期 2016.12.08
申请号 JP20150084434 申请日期 2015.04.16
申请人 TOKYO ELECTRON LTD 发明人 MIZUTANI NOBUTAKA;IWASHITA MITSUAKI;TANAKA TAKASHI
分类号 H01L21/288;C23C18/18;C23C18/32;H01L21/28 主分类号 H01L21/288
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