| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems relating to techniques for improving performances in micoprocessing of a semiconductor element using actinic rays or radiation, in particular, a KrF excimer laser beam, to provide a chemical amplification-type positive resist composition having high sensitivity and high resolution, suppressing generation of standing waves and giving a rectangular profile even when a high-reflection substrate is used as it is without applying an antireflection film, and to provide a pattern forming method using the composition. <P>SOLUTION: The positive resist composition includes: a resin containing a repeating unit having a structure expressed by general formula (I) and absorption at a wavelength of 248 nm, of which solubility in an alkali developer increases under an action of an acid; and a compound capable of generating an acid upon irradiation with actinic rays or radiation. The pattern forming method uses the positive resist composition. <P>COPYRIGHT: (C)2009,JPO&INPIT |
