发明名称 Inspection method and wiring current observation method for semiconductor device
摘要 Infrared laser beam (11) is irradiated onto an integrated circuit (12) as a sample mounted on a sample stage (21) from an infrared laser beam source (23) through a microscope section body (24) and an objective lens (25). A constant voltage source (15) is connected to a power source terminal of the integrated circuit (12). A variation in a current due to a variation in a resistance of a wiring portion due to the irradiation is produced at a ground terminal of the integrated circuit (12). A current variation inspection section (17) detects the current variation. A system control/signal processing section (27) processes the signal and allows an image/waveform display section (28) to display a current image, a defect image or a current waveform. A defect of a wiring may be detected using visible light beam after localization of a suspected failure portion using infrared beam.
申请公布号 US6066956(A) 申请公布日期 2000.05.23
申请号 US19960751725 申请日期 1996.11.18
申请人 NEC CORPORATION 发明人 NIKAWA, KIYOSHI
分类号 G01R31/302;G01R31/311;H01L21/66;(IPC1-7):G01R31/00 主分类号 G01R31/302
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