发明名称 STRUCTURE D'ENCAPSULATION POURVUE D'UN CAPOT ET D'UN SUBSTRAT, POUR CONNECTER AU MOINS UN NANO-OBJET SUR UNE FACE DU SUBSTRAT ET EN REPRENDRE LE CONTACT AU TRAVERS DU CAPOT, ET PROCEDE DE FABRICATION DE LA STRUCTURE
摘要 This structure, that is applicable particularly to manufacturing of <<Beyond CMOS>> type systems comprises a substrate (74) with opposite first and second faces, a cap (80) with opposite first and second faces, the first face of the cap being fixed to the first face of the substrate, at least one cavity (86) defined between the cap and the substrate, at least one nano-object (72) in the cavity, and first doped zones (88, 90) that are formed in the substrate, on the first face of the substrate, the nano-object being electrically connected to the first doped zones. According to the invention, the structure also comprises second doped zones (92, 96) that are formed in the cap, on the first face of the cap and that are at least partially in direct contact with the first doped zones, and means of making contact (96, 98) between the first and the second face of the cap and that open up on the second doped zones.
申请公布号 FR3026560(B1) 申请公布日期 2016.10.28
申请号 FR20140059243 申请日期 2014.09.30
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 BAILLIN XAVIER
分类号 H01L21/768;B82B3/00 主分类号 H01L21/768
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