Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes

摘要

An improved method for manufacturing a semiconductor device is disclosed, wherein self-alignment is achieved between implanted barrier regions in the semiconductor substrate and gate portions of the device. The method includes the step of forming an oxide insulating layer over a polycrystalline silicon layer followed by the step of forming a nitride layer over the oxide layer. In this process the gate electrodes that are formed in the device are separated by very narrow gaps.