发明名称 |
Semiconductor device having conductor lines connecting the elements. |
摘要 |
<p>In a semiconductor device of an integrated circuit having a groove isolation structure (10), an electrostatic separating structure (21) similar to the groove isolation structure is formed under the conductor lines (5) connecting the elements and in a portion of the semiconductor body (7) other than that necessary for the elements. The electrostatic separating structure (21) comprises a V-shaped or U-shaped insulating layer (22), a filled-in nonconductive material (e.g. polycrystalline silicon) (23), and a relatively thick insulating layer (24), so that the stray capacity of the conductor lines (5) can be reduced.</p> |
申请公布号 |
EP0086915(A2) |
申请公布日期 |
1983.08.31 |
申请号 |
EP19820306124 |
申请日期 |
1982.11.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
KIMOTO, MASAYOSHI;MAFUNE, YASUHIKO;SUGO, YASUHISA |
分类号 |
H01L21/76;H01L21/763;H01L21/768;H01L23/522;(IPC1-7):01L21/76;01L23/52 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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