| 摘要 |
PURPOSE:To secure electrical connection between circuit elements and a substrate by, when growing a semiconductor layer having a high impurity density to connect the circuit elements formed on the above layer with the substrate, boring a groove up to the substrate in the semiconductor layer, plugging the groove with Si and forming a high impurity density region by diffusion. CONSTITUTION:An N<+> type layer 102 and an N<-> type layer 103 are laminated on a P-type Si substrate 101 for epitaxial growth and the whole surface thereof is covered with a laminated film comprising an oxide film 104, a nitride film 105 and an oxide film 106. Next, windows are opened on the films 106 and 105, both of which are subjected to reactive ion etching. A groove 107 entering the substrate 101 is bored and then, a side 108 of the groove 107 is recessed inward by plasma etching and the like. After that, an SiO2 film 109 is made to adhere to the side and bottom of the groove and an opening 110 is provided only on the bottom. Removing the films 106 and 105, an Si layer 111 is embedded in a groove 108. Next, boron is diffused through the layer 111 to form a P<+> type region 112 positioning in the substrate thereunder and circuit elements are provided in layers 103a and 103b separated by the groove 107. |
