| 摘要 |
PURPOSE:To remove contaminants or products due to polishing from the surface of a wafer for stabilizing the surface state thereof, by etching the surface of the wafer to reduce its thickness by 0.01-5.0mum after polishing the wafer. CONSTITUTION:After a GaAs single-crystal substrate (wafer) 1 is polished with hypochloritic liquid, it is washed with water and dried. A Ga hydroxide 2 is thereby provided on the surface of the substrate 1. The surface of the hydroxide 2 is etched with a polishing cloth 3 to reduce its thickness by about 0.01-5.0mum. In this manner, any contaminants or products due to polishing are removed from the surface of the wafer 1 and the surface state can be stabilized.
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