| 摘要 |
Wideband amplifier produced on a gallium arsenide substrate, including an amplifier cell 10 composed of a load transistor T1 arranged in series with an amplifier transistor T2. According to the invention, this amplifier also includes a cell 11 for biasing the said amplifier transistor T2, comprising at least one offset transistor T3, T4, the amplifier transistor and the offset transistor T3, T4 being enrichment-type field-effect transistors. Application to integrated circuits on gallium arsenide substrates. <IMAGE>
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