| 摘要 |
PURPOSE:To easily form a shallow junction without surface damage on a semiconductor substrate, to process it at a low temperature and to form an impurity layer to be miniaturized and highly integrated by depositing an amorphous or polycrystalline silicon layer doped with a target impurity on a palladium, platinum or nickel layer formed selectively on the substrate, and epitaxially growing it by a solid growing method at low temperature. CONSTITUTION:A palladium layer 3 is formed by a depositing method, and a high concentration impurity-doped layer 4 doped in high concentration with phosphorus is deposited by a CVD technique. Then, the region except source, drain regions is removed. Thereafter, the palladium is redeposited, and an impurity-doped layer 5 doped with boron in a predetermined concentration is deposited by a CVD method. When the impurity layer and the palladium layer on the surface, drain regions are removed and annealed at low temperature, such as 600 deg.C for a predetermined time, the palladium on the substrate becomes a palladium silicide, moved to the top, and epitaxially grown to form an n<+> type impurity layer 7 of the drain and an n<+> type impurity layer 8 of the source.
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