| 摘要 |
PURPOSE:To assure the rapid actuation by a method wherein the overall exposed surface on source.drain regions is brought into electrical contact with electrode wiring films. CONSTITUTION:An MOS transistor is structured by source.drain and electrodes in direct contact with each other without making so called contact holes. The gap between the ends of contact surfaces between thick source.drain regions 7 and titanium silicide films 12 and the channel ends being decided by the width of residual oxide films 11, i.e. the thickness of sidewalls, the applicable gap shall be as little as possible within the range of normal actuation of device. Resultantly, the source resistance and the drain resistance are minimized if other factors are constant Through these procedures, the rapid actuation of device can be assured.
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