| 摘要 |
PURPOSE:To obtain a good contact characteristic without forming an oxide film on the surface by a method wherein a Ti silicide layer and a polycrystalline Si layer are formed in a semiconductor device and connected to polycrystalline Si via an oxidation-resistant conductive film where the Ti silicide layer has been formed on its one surface. CONSTITUTION:An oxide film 2 for device isolation use, a gate oxide film 3, a polycrystalline Si gate electrode 4, a low-concentration impurity diffusion layer 5, an insulating film side wall 6 and a high-concentration N-type impurity diffusion layer 7 are formed on a P-type Si substrate 1 by an ordinary manufacturing method. Then, Ti of a prescribed thickness is formed on the whole surface by a sputtering method; after that, it is treated at a prescribed temperature by using a halogen lamp; Ti on the diffusion layer 7 reacts with Si; a Ti silicide 8 is formed. This unreacted Ti is removed by selective etching; in addition, an annealing operation is executed by using the halogen lamp. A first interlayer insulating layer 9 is formed by a chemical vapor method; its one part is etched and removed; a first contact hole 10 is formed; a Ti nitride 11 is formed at the upper part of the silicide 8 under the hole 10. |
