发明名称 Semiconductive structure useful as a pressure sensor
摘要 A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
申请公布号 US4945769(A) 申请公布日期 1990.08.07
申请号 US19890319023 申请日期 1989.03.06
申请人 DELCO ELECTRONICS CORPORATION 发明人 SIDNER, DIANE W.;YODER, DOUGLAS J.;MOSS, DAVID E.
分类号 G01L9/00 主分类号 G01L9/00
代理机构 代理人
主权项
地址