发明名称 PRODUCTION OF THIN LAYERS OF A HIGH TEMPERATURE SUPERCONDUCTOR (HTSC) BY A PLASMA-ACTIVATED PHYSICAL VAPOR DEPOSITION PROCESS, AND CATHODES USED THEREIN
摘要 In the process according to the invention, material is vaporized off a cathode and deposited on a substrate in a cathodic arc vaporization process, the arc base being moved on the cathode surface in a random or controlled manner. In the arc vaporization process, preferably at least two cathodes of different alloys or mixtures of the metallic components of the high temperature superconductor (HTSC) are activated for vaporization by an arc and the materials vaporized out of the different alloys are jointly deposited on the substrate, the arc vaporization process occurring reactivity under oxygen atmosphere of preset O2 partial pressure. A heat treatment for adjusting the structure and oxygen stoichiometry suitable for superconduction can be carried out after or during the vaporizing process.
申请公布号 US5061684(A) 申请公布日期 1991.10.29
申请号 US19890412082 申请日期 1989.09.25
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 FRELLER, HELMUT;SCHACK, PETER
分类号 C04B41/87;C01B13/14;C01G1/00;C01G3/00;C01G15/00;C01G29/00;C04B35/45;C23C14/08;C23C14/24;C23C14/32;H01B12/06;H01B13/00;H01L39/24 主分类号 C04B41/87
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