发明名称 Stacked multi-poly spacers with double cell plate capacitor
摘要 A multi-poly spacer, double-plate, stacked capacitor or MDSC using a modified stacked capacitor storage cell fabrication process. The MDSC is made up of a rectangular boxed-shaped polysilicon storage node structure, having multiple poly post residing in a buried contact used to connect the MDSC to an active area. The polysilicon storage node structure is overlaid by polysilicon with a dielectric sandwiched in between to form a completed MDSC. Developing the MDSC from a planarized surface allows the capacitor to be fabricated with only 2 photomask steps. With the 3-dimensional shape and a texturized surface of a polysilicon storage node plate, substantial capacitor plate surface area of 100% or more is gained at the storage node.
申请公布号 US5126280(A) 申请公布日期 1992.06.30
申请号 US19910653035 申请日期 1991.02.08
申请人 MICRON TECHNOLOGY, INC. 发明人 CHAN, HIANG C.;FAZAN, PIERRE
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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