发明名称 |
Stacked multi-poly spacers with double cell plate capacitor |
摘要 |
A multi-poly spacer, double-plate, stacked capacitor or MDSC using a modified stacked capacitor storage cell fabrication process. The MDSC is made up of a rectangular boxed-shaped polysilicon storage node structure, having multiple poly post residing in a buried contact used to connect the MDSC to an active area. The polysilicon storage node structure is overlaid by polysilicon with a dielectric sandwiched in between to form a completed MDSC. Developing the MDSC from a planarized surface allows the capacitor to be fabricated with only 2 photomask steps. With the 3-dimensional shape and a texturized surface of a polysilicon storage node plate, substantial capacitor plate surface area of 100% or more is gained at the storage node.
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申请公布号 |
US5126280(A) |
申请公布日期 |
1992.06.30 |
申请号 |
US19910653035 |
申请日期 |
1991.02.08 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CHAN, HIANG C.;FAZAN, PIERRE |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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