发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To obtain a pattern having a surface relief structure by partially irradiating a thin film of a photosensitive resin consisting of a specific polymer and compound with ultraviolet ray, by removing unreacted compound with a specific solvent and by irradiating the full surface with ultraviolet ray. CONSTITUTION:The thin film of the photosensitive resin composition consisting of a polymer A containing 2-100mol% structure unit expressed by the formula I, 0-98mol% structure unit expressed by the formula II and a compound B selected from a group of aromatic aldehyde and aromatic keton is formed. In the formula I, X<1> is hydrogen atom or alkyl group, Y<1> is cycloalkenyl group or the like. And in the formula II, X<2> is hydrogen atom or alkyl group, Y<2> is phenyl group or the like. Next, the thin film is partially irradiated with ultraviolet wave corresponding the the desired pattern and unreacted compound B is removed from the thin film with the solvent which does not dissolve the polymer A. After that, the full surface of the thin film is irradiated with ultraviolet wave. In this way, refractive index of the exposed part becomes higher than that the unexposed part and heat resistant pattern is formed.
申请公布号 JPH04309954(A) 申请公布日期 1992.11.02
申请号 JP19910103960 申请日期 1991.04.08
申请人 KURARAY CO LTD 发明人 NAKAMU SHIGEKI;WATANABE MUTSUJI;ICHIMURA EIJIRO
分类号 G03F7/004;G03F7/027;G03F7/031;G03F7/40 主分类号 G03F7/004
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